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BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 128K X 8 bit
DESCRIPTION
BS62LV1029
* Vcc operation voltage : 4.5V ~ 5.5V * Very low power consumption : Vcc = 5.0V C-grade : 46mA (@55ns) operating current I- grade : 47mA (@55ns) operating current C-grade : 38mA (@70ns) operating current I- grade : 39mA (@70ns) operating current 0.6uA (Typ.) CMOS standby current * High speed access time : -55 55ns -70 70ns * Automatic power down when chip is deselected * Three state outputs and TTL compatible * Fully static operation * Data retention supply voltage as low as 1.5V * Easy expansion with CE2, CE1, and OE options
The BS62LV1029 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.6uA at 5V/25oC and maximum access time of 55ns at 5V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV1029 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV1029 is available in DICE form , JEDEC standard 32 pin 450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4 mm STSOP and 8mmx20mm TSOP.
PRODUCT FAMILY
PRODUCT FAMILY BS62LV1029SC BS62LV1029TC BS62LV1029STC BS62LV1029PC BS62LV1029JC BS62LV1029DC BS62LV1029SI BS62LV1029TI BS62LV1029STI BS62LV1029PI BS62LV1029JI BS62LV1029DI OPERATING TEMPERATURE Vcc RANGE SPEED (ns)
55ns :4.5~5.5V 70ns :4.5~5.5V
POWER DISSIPATION STANDBY Operating
(ICCSB1, Max) (ICC, Max)
55ns
PKG TYPE SOP-32 TSOP-32 STSOP-32 PDIP-32 SOJ-32 DICE SOP-32 TSOP-32 STSOP-32 PDIP-32 SOJ-32 DICE
Vcc=5.0V
Vcc= 5.0V
70ns
+0 C to +70 C
O
O
4.5V ~ 5.5V
55/70
8.0uA
46mA
38mA
-40 C to +85 C
O
O
4.5V~ 5.5V
55/70
20uA
47mA
39mA
PIN CONFIGURATIONS
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 BS62LV1029SC 26 BS62LV1029SI 25 BS62LV1029PC 24 BS62LV1029PI 23 BS62LV1029JC 22 BS62LV1029JI 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 DQ7 DQ6 DQ5 DQ4 DQ3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
BLOCK DIAGRAM
A6 A7 A12 A14 A16 A15 A13 A8 A9 A11
*
Address Input Buffer
20
Row Decoder
1024
Memory Array 1024 x 1024
1024 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 8 Data Input Buffer 8 Column I/O Write Driver Sense Amp 128 Column Decoder 14 Control Address Input Buffer
8
A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
BS62LV1029TC BS62LV1029STC BS62LV1029TI BS62LV1029STI
OE A10 CE1 DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3
Data Output Buffer
8
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS62LV1029
*
CE2 CE1 WE OE Vdd Gnd
A5 A4 A3 A2 A1 A0 A10
1
Revision 1.1 Jan. 2004
BSI
PIN DESCRIPTIONS
BS62LV1029
Function
These 17 address inputs select one of the 131,072 x 8-bit words in the RAM CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when data read from or write to the device. If either chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected.
Name
A0-A16 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
DQ0-DQ7 Data Input/Output Ports Vcc Gnd
These 8 bi-directional ports are used to read data from or write data into the RAM. Power Supply Ground
TRUTH TABLE
MODE Not selected (Power Down) Output Disabled Read Write WE X X H H L CE1 H X L L L CE2 X L H H H OE X X H L X I/O OPERATION High Z High Z DOUT DIN Vcc CURRENT I CCSB, I CCSB1 I CC I CC I CC
ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL V TERM T BIAS T STG PT I OUT PARAMETER
Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current
OPERATING RANGE
UNITS
V
O
RATING
-0.5 to Vcc+0.5 -40 to +85 -60 to +150 1.0 20
RANGE
Commercial Industrial
AMBIENT TEMPERATURE
0 O C to +70 O C -40 C to +85 C
O O
Vcc
4.5V ~ 5.5V 4.5V ~ 5.5V
C C
O
W mA
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CIN CDQ
PARAMETER Input Capacitance Input/Output Capacitance
CONDITIONS
MAX.
UNIT
VIN=0V VI/O=0V
6 8
pF pF
1. This parameter is guaranteed and not 100% tested.
R0201-BS62LV1029
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Revision 1.1 Jan. 2004
BSI
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER NAME
VIL VIH IIL ILO VOL VOH ICC
(5)
BS62LV1029
TEST CONDITIONS
Vcc=5.0V Vcc=5.0V
PARAMETER
Guaranteed Input Low Voltage(2) Guaranteed Input High (2) Voltage Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage Operating Power Supply Current Standby Current-TTL
MIN.
-0.5 2.2 --Vcc=5.0V Vcc=5.0V
TYP. (1)
----------
MAX.
0.8 Vcc+0.3 1 1 0.4 -47 39 1.0
UNITS V V uA uA V V mA mA
Vcc = Max, VIN = 0V to Vcc Vcc = Max, CE1= VIH, CE2= VIL, or OE = VIH, VI/O = 0V to Vcc Vcc = Max, IOL = 2.0mA Vcc = Min, IOH = -1.0mA CE1 = VIL, or CE2 = VIH, IDQ = 0mA, F = Fmax(3) CE1 = VIH, or CE2 = VIL, IDQ = 0mA
CE1Vcc-0.2V or CE20.2V, VINVcc-0.2V or VIN0.2V
55ns 70ns
Vcc=5.0V
-2.4 ----
Vcc=5.0V
ICCSB
(4)
ICCSB1
Standby Current-CMOS
Vcc=5.0V
--
0.6
20
uA
1. Typical characteristics are at TA = 25oC. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 3. Fmax = 1/tRC . 5. Icc_Max. is 46mA(@55ns) / 38mA(@70ns) at Vcc=5.0V and TA= 0oC~70oC. 4. IccSB1_Max. is 8.0uA at Vcc=5.0V and TA=70oC.
DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
SYMBOL
VDR ICCDR(3) tCDR tR
PARAMETER
Vcc for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time
TEST CONDITIONS
CE1 Vcc - 0.2V or CE2 0.2V, VIN Vcc - 0.2V or VIN 0.2V CE1 Vcc - 0.2V or CE2 0.2V, VIN Vcc - 0.2V or VIN 0.2V See Retention Waveform
MIN.
1.5 -0 TRC
(2)
TYP. (1)
-0.05 ---
MAX.
-0.3 ---
UNITS
V uA ns ns
1. Vcc = 1.5V, TA = + 25OC 2. tRC = Read Cycle Time 3. IccDR_MAX. is 0.2uA at TA=70OC.
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode VDR 1.5V
Vcc
VIH
Vcc
Vcc
t CDR
CE1 Vcc - 0.2V
tR
VIH
CE1
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
Vcc
Vcc
VDR 1.5V
Vcc
t CDR
tR
CE2 0.2V
CE2
R0201-BS62LV1029
VIL
VIL
3
Revision 1.1 Jan. 2004
BSI
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
BS62LV1029
KEY TO SWITCHING WAVEFORMS
Vcc / 0V 1V/ns 0.5Vcc CL = 30pF+1TTL CL = 100pF+1TTL
WAVEFORM INPUTS MUST BE STEADY MAY CHANGE FROM H TO L MAY CHANGE FROM L TO H DON T CARE: ANY CHANGE PERMITTED DOES NOT APPLY OUTPUTS MUST BE STEADY WILL BE CHANGE FROM H TO L WILL BE CHANGE FROM L TO H CHANGE : STATE UNKNOWN CENTER LINE IS HIGH IMPEDANCE "OFF "STATE
Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load
,
AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
READ CYCLE
JEDEC PARAMETER NAME PARAMETER NAME
DESCRIPTION
Read Cycle Time Address Access Time Chip Select Access Time Chip Select Access Time Output Enable to Output Valid Chip Select to Output Low Z Chip Select to Output Low Z Output Enable to Output in Low Z Chip Deselect to Output in High Z Chip Deselect to Output in High Z Output Disable to Output in High Z Data Hold from Address Change (CE1) (CE2) (CE1) (CE2) (CE1) (CE2)
CYCLE TIME : 55ns (Vcc = 4.5~5.5V) MIN. TYP. MAX.
CYCLE TIME : 70ns (Vcc = 4.5~5.5V) MIN. TYP. MAX.
UNIT ns ns ns ns ns ns ns ns ns ns ns ns
t AVAX t AVQV t E1LQV t E2HOV t GLQV t E1LQX t E2HOX t GLQX t E1HQZ t E2HQZ t GHQZ t AXOX
t RC t AA t ACS1 t ACS2 t OE t CLZ1 t CLZ2 t OLZ t CHZ1 t CHZ2 t OHZ t OH
55 ----10 10 10 ---10
-------------
-55 55 55 30 ---35 35 30 --
70 ----10 10 10 ---10
-------------
-70 70 70 40 ---40 40 35 --
R0201-BS62LV1029
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Revision 1.1 Jan. 2004
BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
BS62LV1029
t RC
ADDRESS
t
D OUT
t
OH
AA
t OH
READ CYCLE2
CE1
(1,3,4)
t
CE2
(5) CLZ
ACS1
t t
ACS2
t
CHZ1,
t
(5)
CHZ2
D OUT
(1,4)
READ CYCLE3
t RC
ADDRESS
t
OE
AA
t
CE1
OE
t
OH
t t
CLZ1
OLZ
t ACS1 (5)
t OHZ (5) (1,5) t CHZ1
CE2
t t
(5) CLZ2
ACS2
t
(2,5)
CHZ2
D OUT
NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE1 = VIL and CE2= VIH. 3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high. 4. OE = VIL . 5. The parameter is guaranteed but not 100% tested.
R0201-BS62LV1029
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Revision 1.1 Jan. 2004
BSI
AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
WRITE CYCLE
JEDEC PARAMETER PARAMETER NAME NAME DESCRIPTION
Write Cycle Time Chip Select to End of Write Address Set up Time Address Valid to End of Write Write Pulse Width Write Recovery Time Write Recovery Time Write to Output in High Z Data to Write Time Overlap Data Hold from Write Time Output Disable to Output in High Z End of Write to Output Active (CE1 , WE) (CE2) CYCLE TIME : 55ns (Vcc = 4.5~5.5V) MIN. TYP. MAX.
BS62LV1029
CYCLE TIME : 70ns (Vcc = 4.5~5.5V) MIN. TYP. MAX.
UNIT ns ns ns ns ns ns ns ns ns ns ns ns
t AVAX t E1LWH t AVWL t AVWH t WLWH t WHAX t E2LAX t WLOZ t DVWH t WHDX t GHOZ t WHQX
t WC t CW t AS t AW t WP t WR1 t WR2 t WHZ t DW t DH t OHZ t OW
55 55 0 55 35 0 0 -25 0 -5
-------------
-------25 --25 --
70 70 0 70 50 0 0 -30 0 -5
-------------
-------30 --30 --
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
ADDRESS
t
OE
(3)
WR1
t CW
CE1
(5)
(11)
CE2
(5)
t CW t
AW
(11)
t WR2
(2)
(3)
WE
t AS
(4,10)
t
WP
t OHZ
D OUT
t DH t DW
D IN R0201-BS62LV1029 Revision 1.1 Jan. 2004
6
BSI
WRITE CYCLE2 (1,6)
BS62LV1029
t WC
ADDRESS
(11) (5)
t
CW
CE1
CE2
(5)
t
WE
t CW
AW
(11)
t WR2
(2)
t WP
(3)
t AS
(4,10)
t WHZ
D OUT
t t DW t
OW
(7)
(8)
DH
(8,9)
D IN
NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. TWR is measured from the earlier of CE1 or WE going high or CE2 going low at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL ). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE1 is low and CE2 is high during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. The parameter is guaranteed but not 100% tested. 11. TCW is measured from the later of CE1 going low or CE2 going high to the end of write.
R0201-BS62LV1029
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Revision 1.1 Jan. 2004
BSI
ORDERING INFORMATION
BS62LV1029
BS62LV1029 X X
Z
YY
SPEED 55: 55ns 70: 70ns PKG MATERIAL -: Normal G: Green P: Pb free GRADE C: +0oC ~ +70oC I: -40oC ~ +85oC PACKAGE J: SOJ S: SOP P: PDIP T: TSOP (8mm x 20mm) ST: Small TSOP (8mm x 13.4mm) D: DICE
Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support systems and critical medical instruments.
PACKAGE DIMENSIONS
WITH PLATING
b
c c1
BASE METAL
b1
SECTION A-A
SOP -32
R0201-BS62LV1029
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Revision 1.1 Jan. 2004
BSI
PACKAGE DIMENSIONS (continued)
BS62LV1029
STSOP - 32
TSOP - 32
R0201-BS62LV1029
9
Revision 1.1 Jan. 2004
BSI
PACKAGE DIMENSIONS (continued)
BS62LV1029
PDIP - 32
SOJ - 32
R0201-BS62LV1029
10
Revision 1.1 Jan. 2004

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